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3216X7R 1N3293A CXD2540Q US3004 EC110 GC70F HMC28606 ASM3P
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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1680
DESCRIPTION *With TO-3PFa package *High speed switching *High VCBO *Large collector power dissipation APPLICATIONS *For horizontal deflection output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 70 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 330 200 6 7 10 3 W UNIT V V V A A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SD1680
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA ;IB=0
200
V
V(BR)CBO VCEsat
Collector-base breakdown voltage
IC=1mA; IE=0 IC=5A; IB=0.5A
330
V
Collector-emitter saturation voltage
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A; IB=0.5A VCE=330V; VBE=0 Ta=100 VEB=6V; IC=0
1.2 1 15 1
V
ICES
Collector cut-off current
mA
IEBO
Emitter cut-off current
mA
hFE
DC current gain
IC=5A ; VCE=4V IC=5A IB1=0.8A,VEB=-5V,RB=0.5
15 s
tf
Fall time
0.75
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1680
Fig.2 outline dimensions (unindicated tolerance:0.10 mm)
3


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